IONTOF.COM ION-TOF TOF-SIMS SIMS SURFACE-ANALYSIS TIME-OF-FILGHT SECONDARY-ION-MASS-SPECTROMETRY SURFACE-SPECTROSCOPY SURFACE-IMAGING DEPTH-PROFILING 3D-ANALYSIS THIN-FILM-ANALYSIS MIRCO-ANALYSIS INTERFACE-ANALYSIS ANALYTICAL-INSTRUMENTS SIENTIFIC-IN

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TOF-SIMS

LEIS

TOF-SIMS

TOF-SIMS is an acronym for the combination of
the analytical technique SIMS (Secondary Ion Mass Spectrometry) with Time of Flight mass analysis (TOF). In different operational modes - surface spectroscopy, surface imaging, depth profiling,
3D analysis - this analysis technique offers unique features:

Information Obtained

			detection of all elements and isotopes
			chemical information via molecular and cluster ions

Detection Limits

			ppm of a monolayer for elements
			sub-fmol for molecules

Spatial Location

			high lateral resolution (< 60 nm)
			high surface sensitivity (< 1 nm)
			high depth resolution (< 1 nm)
LEIS The significant advantages of low energy ion scattering (LEIS) are extreme surface sensitivity and quantification. Contrary to many other established surface analysis techniques such as XPS or AES, which generally integrate over several atomic layers, LEIS characterizes individual atomic layers.