technique-IONTOF-TOF-SIMS-TIME-OF-FLIGHT-SURFACE-ANALYSIS
technique-IONTOF-TOF-SIMS-TIME-OF-FLIGHT-SURFACE-ANALYSIS IONTOF-TOF-SIMS-TIME-OF-FLIGHT-SURFACE-ANALYSIS IONTOF-TOF-SIMS-TIME-OF-FLIGHT-SURFACE-ANALYSIS
IONTOF-TOF-SIMS-TIME-OF-FLIGHT-SURFACE-ANALYSIS
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IONTOF-TOF-SIMS-TIME-OF-FLIGHT-SURFACE-ANALYSIS
IONTOF-TOF-SIMS-TIME-OF-FLIGHT-SURFACE-ANALYSIS
IONTOF-TOF-SIMS-TIME-OF-FLIGHT-SURFACE-ANALYSIS
IONTOF-TOF-SIMS-TIME-OF-FLIGHT-SURFACE-ANALYSIS
IONTOF-TOF-SIMS-TIME-OF-FLIGHT-SURFACE-ANALYSIS
IONTOF-TOF-SIMS-TIME-OF-FLIGHT-SURFACE-ANALYSIS
IONTOF-TOF-SIMS-TIME-OF-FLIGHT-SURFACE-ANALYSIS
IONTOF-TOF-SIMS-TIME-OF-FLIGHT-SURFACE-ANALYSIS
IONTOF-TOF-SIMS-TIME-OF-FLIGHT-SURFACE-ANALYSIS
IONTOF-TOF-SIMS-TIME-OF-FLIGHT-SURFACE-ANALYSIS
IONTOF-TOF-SIMS-TIME-OF-FLIGHT-SURFACE-ANALYSIS
IONTOF-TOF-SIMS-TIME-OF-FLIGHT-SURFACE-ANALYSIS
IONTOF-TOF-SIMS-TIME-OF-FLIGHT-SURFACE-ANALYSIS
IONTOF-TOF-SIMS-TIME-OF-FLIGHT-SURFACE-ANALYSIS
IONTOF-TOF-SIMS-TIME-OF-FLIGHT-SURFACE-ANALYSIS
IONTOF-TOF-SIMS-TIME-OF-FLIGHT-SURFACE-ANALYSIS
IONTOF-TOF-SIMS-TIME-OF-FLIGHT-SURFACE-ANALYSIS
IONTOF-TOF-SIMS-TIME-OF-FLIGHT-SURFACE-ANALYSIS
IONTOF-TOF-SIMS-TIME-OF-FLIGHT-SURFACE-ANALYSIS
IONTOF-TOF-SIMS-TIME-OF-FLIGHT-SURFACE-ANALYSIS
IONTOF-TOF-SIMS-TIME-OF-FLIGHT-SURFACE-ANALYSIS
IONTOF-TOF-SIMS-TIME-OF-FLIGHT-SURFACE-ANALYSIS
IONTOF-TOF-SIMS-TIME-OF-FLIGHT-SURFACE-ANALYSIS
IONTOF-TOF-SIMS-TIME-OF-FLIGHT-SURFACE-ANALYSIS
IONTOF-TOF-SIMS-TIME-OF-FLIGHT-SURFACE-ANALYSIS
IONTOF-TOF-SIMS-TIME-OF-FLIGHT-SURFACE-ANALYSIS
IONTOF-TOF-SIMS-TIME-OF-FLIGHT-SURFACE-ANALYSIS
TOF-SIMS
LEIS
 Energy Analysis
 TOF Mass Filter
 Surface Spectroscopy
 Surface Imaging
 Static Depth Profiling
 Sputter Depth Profiling
 
IONTOF-TOF-SIMS-TIME-OF-FLIGHT-SURFACE-ANALYSIS
Sputter Depth Profiling

By using a low-energy sputter ion source, fitted to the Qtac100, in a dual beam mode with LEIS analysis, high-resolution chemical depth profiles are obtained. In contrast to SIMS, there is no need to use reactive sputter species, which lead to changes in sputter rate and ionization yield close to the surface. The Qtac100 provides easy quantification even in the first few nanometers of the profile.
 


 IONTOF-TOF-SIMS-TIME-OF-FLIGHT-SURFACE-ANALYSIS IONTOF-TOF-SIMS-TIME-OF-FLIGHT-SURFACE-ANALYSIS IONTOF-TOF-SIMS-TIME-OF-FLIGHT-SURFACE-ANALYSIS IONTOF-TOF-SIMS-TIME-OF-FLIGHT-SURFACE-ANALYSIS

Sputter depth
profile of a 30 keV arsenic implant into silicon, measured
with LEIS analysis during 1 keV
argon sputtering

 
IONTOF-TOF-SIMS-TIME-OF-FLIGHT-SURFACE-ANALYSIS