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Today History Profile History TOF-SIMS and many of its applications have been pioneered by Prof. Benninghoven and his group in the early 80’s. Two instrument generations for surface spectroscopy were developed at the University of Muenster. In 1989 ION-TOF started to commercialise the technique and has continued the development of TOF-SIMS instrumentation. In 2007 ION-TOF expanded its product range to the complementary technique of high sensitivity low energy ion scattering (LEIS). Based on the pioneering research and instrument development carried out by Professor Brongersma and his group at the Eindhoven University of Technology, carried forward by Calipso BV, and their long term application experience, ION-TOF has developed the next generation of LEIS instruments. Qtac100 2007     Qtac100 TOF.SIMS 300 R 2006     TOF.SIMS 300 R 2005 MCs mode with cluster primary ions TOF.SIMS 5 2004     Bi Cluster Ion Source for further improved cluster performance 2003 C60 Cluster Ion Source for surface spectroscopy and depth profiling 2002 Three-lens Cluster LMIG with electrodynamic mass filter for sub-micron imaging using Au cluster ions TOF-SIMS IV 1999     First imaging results using Au cluster ions 1999 12” wafer analysis capability 1998 SF6-Source 1997 Macroraster for large area analysis 1995 Patented Burst Mode for imaging 1994 First Dual Beam Mode depth profiling TOF-SIMS III 1993     8” wafer analysis capability 1990 Motionless ultrafast blanking of Ga gun 1990 Flexible sample handling with 5 axis stage TOF-SIMS II 1988     First charge compensation for analysis of insulators 1986 High mass accuracy in low ppm range 1986 First TOF mass resolution > 10,000 TOF-SIMS I 1984     High mass range > 10,000 u with 20 kV postacceleration 1982 World's first high transmission energy focusing TOF-SIMS